Download Acoustic Wave and Electromechanical Resonators: Concept to by Humberto Campanella PDF

By Humberto Campanella

This groundbreaking publication will give you a accomplished figuring out of FBAR (thin-film bulk acoustic wave resonator), MEMS (microelectomechanical system), and NEMS (nanoelectromechanical method) resonators. For the 1st time anyplace, you discover vast assurance of those units at either the know-how and alertness degrees. This useful reference will give you counsel in layout, fabrication, and characterization of FBARs, MEMS and NEBS. It discusses the combination of those units with typical CMOS (complementary-metal-oxide-semiconductor) applied sciences, and their software to sensing and RF platforms. in addition, this one-stop source appears on the major features, adjustments, and boundaries of FBAR, MEMS, and NEMS units, assisting you to decide on the perfect methods on your initiatives. Over 280 illustrations and greater than one hundred thirty equations help key themes in the course of the ebook.

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Additional resources for Acoustic Wave and Electromechanical Resonators: Concept to Key Applications (Integrated Microsystems)

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18] Roukes, M. , “Nanoelectromechanical Systems,” Tech. Dig. of the 2000 Solid-State Sensor and Actuator Workshop, Hilton Head, SC, June 4–8, 2000, pp. 1–4. [19] Gibson, C. , D. Alastair Smith, and C. J. Roberts, “Calibration of Silicon AFM Cantilevers,” Nanotechnology, Vol. 16, 2005, pp. 234–238. [20] Blom, F. , “Dependence of the Quality Factor of Micromachined Silicon Beam Resonators on Pressure and Geometry,” J. Vac. Sci. , Vol. B10, 1992, pp. 19–26. [21] Mangiarotty, R. , “Acoustic Radiation Damping of Vibrating Structures,” J.

Si wafers of types N or P with diameters of 100 to 300 mm and thicknesses from 300 μm to 1 mm are available in the market. , 100, 111) and doping types determine the wafer resistivity and fabrication time of micromachined MEMS, among other parameters. Different methods exist to fabricate Si wafers. 16 Process of common-to-IC MEMS fabrication. 3 Key Fabrication Technologies 25 49]. Nevertheless, the presence of impurity materials in Si wafer fabrication is 14 3 unavoidable, with concentrations of oxygen lower than 1 × 10 atoms/cm , carbon 12 14 3 impurities between 1 × 10 − 1 × 10 atoms/cm , and heavy metals being the main materials found in the wafers.

Physical phenomena, modeling and transduction principles of resonant devices, and fabrication techniques have been examined (piezoelectric transduction will be described in Chapter 2). We have learned that MEMS and NEMS resonators are differentiated from each other by their size and by their fabrication approach and physics scaling. Current NEMS engineering is facing challenges solved for MEMS many years ago. Among them, we find packaging, Q factor, high surface-to-volume ratio, and repeatability.

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