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By J. Van Bladel

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Wang [ J. Vac. Sci. Technol. 9 (1991) p. 1740-5 ] K. Yasumura et al [ J. Cryst. Growth (Netherlands) vol. 20-3 ] KJ. H. Lockwood [ Proc. 3 Growth of HgCdTe by vapour phase epitaxy Previous Page S J C . Irvine February 1994 A INTRODUCTION Vapour phase epitaxial (VPE) growth of HgCdTe (MCT) has developed in two broad areas, (a) sublimation techniques, generally called isothermal-VPE (ISOVPE), and (b) metal-organic vapour phase epitaxy (MOVPE). An overriding consideration of both approaches is the high equilibrium vapour pressure of mercury, determined by the pressure-temperature phase diagram, which is greater than the equilibrium pressures of cadmium and tellurium by at least two to three orders of magnitude (see Brebrick and Strauss [I]).

Different approaches, such as direct alloy growth (DAG), interdifflised multilayer process (IMP), and photo-assisted MOVPE will also be outlined. B ISOVPE The first vapour phase epitaxial growth of MCT was the closed space method of Cohen-Solal et al [3,4]. This entailed using a HgTe source wafer, placed in close proximity (-5 mm) from a CdTe substrate and separated with a silica spacer ring. This assembly was placed in a quartz ampoule, sealed and heated isothermally to 6000C to sublime Hg and Te2 from the source to the substrate.

Astles et al [36] showed this to be due to out-diffusion of a proportion of the Cu to the surface. Kalisher [20] has carried out an extensive study of doping in Hg-rich LPE. In nearly all cases, the impurities behaved as expected from their positions in the periodic table and could be introduced over a wide range of carrier concentrations. In and As or Sb were identified as particularly good n- and p-type dopants respectively. G MULTILAYER GROWTH Although LPE does not lend itself to multilayer growth as readily as MOVPE or MBE, several workers have reported results on double-epitaxial growth [19,62,71-76].

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