By Jeroen A. Croon
Matching homes of Deep Sub-Micron MOS Transistors examines this attention-grabbing phenomenon. Microscopic fluctuations reason stochastic parameter fluctuations that have an effect on the accuracy of the MOSFET. For analog circuits this determines the trade-off among velocity, strength, accuracy and yield. additionally, a result of down-scaling of machine dimensions, transistor mismatch has an expanding impression on electronic circuits. The matching houses of MOSFETs are studied at numerous degrees of abstraction: an easy and physics-based version is gifted that effectively describes the mismatch within the drain present. The version is illustrated through dimensioning the unit present mobile of a current-steering D/A converter. the main customary the right way to extract the matching homes of a know-how are bench-marked with admire to version accuracy, size accuracy and pace, and actual contents of the extracted parameters. The actual origins of microscopic fluctuations and the way they have an effect on MOSFET operation are investigated. This results in a refinement of the commonly utilized 1/area legislations. additionally, the research of straightforward transistor types highlights the actual mechanisms that dominate the fluctuations within the drain present and transconductance. The influence of approach parameters at the matching houses is mentioned. The impression of gate line-edge roughness is investigated, that's thought of to be one of many roadblocks to the additional down-scaling of the MOS transistor. Matching houses of Deep Sub-Micron MOS Transistors is aimed toward machine physicists, characterization engineers, expertise designers, circuit designers, or anyone else drawn to the stochastic homes of the MOSFET.
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Additional info for Matching Properties of Deep Sub-Micron MOS Transistors (The Springer International Series in Engineering and Computer Science)
Steps of 50 mV are suﬃciently small. g. temperature) can vary over time, we want to measure these curves as fast ’after’ each other as possible. This is done in the following way. First the voltages are supplied to the common source, common bulk, common gate and separate drains. Next the drain current of the ﬁrst transistor is measured, then the drain current of the second transistor. The gate bias is increased (or decreased in the case of PMOSFETs) by 50 mV and again the two drain currents are measured directly after each other.
2 Width and length of the unit current cell The required accuracy of the unit current cell puts a constraint on the dimensions of the current cell. This constraint can be calculated using the model that was derived earlier in this chapter. However, the bias conditions of the transistor that provides the current need to be known. 17. Two possible conﬁgurations of the unit current cell of a DAC These depend on the conﬁguration of the unit current cell. 17 shows two possible conﬁgurations. 17a, is the basic conﬁguration.
7 % yield and If c = 20 mA cases. 6 Conclusions This chapter dealt with two subjects, the measurement of mismatch in the drain current and the modeling of this mismatch. Firstly, our mismatch measurement setup was described and an overview was presented of commonly used test-structures for qualifying the matching properties of a certain technology. Secondly the drain-current-mismatch model was developed. 18 µm CMOS technology. In the derivation of the model we strived for a physics based one, valid over a large bias range, continuous between diﬀerent regions of operation and as simple as possible.