Download III-V Semiconductor Materials and Devices by R.J. MALIK (Eds.) PDF

By R.J. MALIK (Eds.)

The most emphasis of this quantity is on III-V semiconductor epitaxial and bulk crystal development ideas. Chapters also are integrated on fabric characterization and ion implantation. so as to placed those development strategies into standpoint a radical assessment of the physics and expertise of III-V units is gifted. this is often the 1st e-book of its variety to debate the idea of many of the crystal development recommendations with regards to their merits and boundaries to be used in III-V semiconductor units

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5. Fundamentals of crystal growth The following section deals with the scientific understanding of melt-growth phenomena, together with the underlying principal control parameters and constraints which affect the quality of single crystal growth. Whilst many of the topics are of significance to melt growth generally, they will be discussed in the context of the growth of III-Vs, with special emphasis on InSb, GaAs and InP. Vertical pulling and horizontal growth will be considered jointly where appropriate so that equivalent phenomena in the two technologies can be equated and contrasted.

Experimentally during the growth of a crystal if k < 1, solute will be rejected and give rise to a boundary layer (fig. 16) of rejected impurity which is transported away under the influence of diffusion and convection. It is convenient to define in this situation an interface distribution coefficient fe*( = C^/C^ and an effective distribution coefficient fceff ( = CS/CL). The latter is the parameter measured experimentally since both the concentration in the bulk melt and also that in the crystal are accessible.

The application of the idea to the growth of large LECGaAs crystals is being developed using superconducting magnets. , 1984) that a field of 1300 Oe did reduce the B contamination from a BN crucible and the Si contamination from a Si0 2 crucible, presumably by restricting the flow and mixing near the crucible walls. The avoidance of rotational striations is not easy in view of the need to arrange that the rotation of the crystal be axially symmetric with thermal symmetry of the melt. One way of overcoming this difficult requirement, which is not generally discussed, is simply to rotate the melt—by, for example, electromagnetic stirring—but not the crystal.

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