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By Adolph Blicher

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4 Carrier Lifetime at High Injection Levels The rate of the injected carrier recombination can be represented by U = —ari — bri 2 — cn' , 3 (8) where ri is the excess carrier density per cubic centimeter. The first term on the right-hand side of equation (8) is due to the carrier recombination via recombination centers [ 5 ] , and the coefficient a is the reciprocal of the lifetime at moderate injection levels. The second term is due to the direct band-to-band transition and is normally negligible for silicon with its indirect energy gap.

Tech. J. 46, 1055 (1967). P. B. Gray and D. M. Brown, AppL Phys. Lett. 8, 31 (1966). D. M. Brown and P. V. Gray, J. Electrochem. Soc. 119, 388 (1972). D. S. Kerr, J. S. Logan, P. K. Burkhardt, and W. A. Pliskin, IBM J. Res. Develop. 8, 376 (1964). 26 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 26. 27. 28. 29. 1 SEMICONDUCTOR SURFACE THEORY CONCEPTS R. R. Verderber, G. A. Gruber, J. W. Ostroski, and J. E. Johnson, IEEE Trans. Electron Devices ED-17, 797 (1970). S. K. Tung and R. C. Caffrey, J. Electrochem.

75 V c m " < E < 6 χ ΙΟ V c m " for holes. In many instances it is satisfactory to assume the equality of the ionization coefficients

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