
By Adolph Blicher
312 pages
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Additional resources for Field-Effect and Bipolar Power Transistor Physics
Example text
4 Carrier Lifetime at High Injection Levels The rate of the injected carrier recombination can be represented by U = —ari — bri 2 — cn' , 3 (8) where ri is the excess carrier density per cubic centimeter. The first term on the right-hand side of equation (8) is due to the carrier recombination via recombination centers [ 5 ] , and the coefficient a is the reciprocal of the lifetime at moderate injection levels. The second term is due to the direct band-to-band transition and is normally negligible for silicon with its indirect energy gap.
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75 V c m " < E < 6 χ ΙΟ V c m " for holes. In many instances it is satisfactory to assume the equality of the ionization coefficients