
By Vladislav A. Vashchenko, Andrei Shibkov
This e-book and Simulation software program package venture pricey Reader, this booklet venture brings to you a special examine device for ESD safeguard ideas utilized in analog-integrated circuit (IC) layout. Quick-start studying is mixed with in-depth knowing for the entire spectrum of cro- disciplinary wisdom required to excel within the ESD ?eld. The chapters conceal technical fabric from effortless semiconductor constitution and equipment degrees as much as complicated analog circuit layout examples and case experiences. The e-book venture presents assorted strategies for studying the fabric. the published fabric might be studied as any typical technical textbook. while, an alternative choice provides parallel workout utilizing the trial model of a complementary advertisement simulation device with ready simulation examples. blend of the textbook fabric with numerical simulation event provides a distinct chance to realize a degree of craftsmanship that's demanding to accomplish in a different way. The e-book is bundled with simpli?ed trial model of business combined- TM mode simulation software program from Angstrom layout Automation. The DECIMM (Device Circuit Mixed-Mode) simulator software and complementary to the ebook s- ulation examples should be downloaded from www.analogesd.com. The simulation examples ready through the authors aid the speci?c examples mentioned around the e-book chapters. A key notion in the back of this undertaking is to supply a chance not to in simple terms learn the booklet fabric but in addition achieve a far deeper figuring out of the topic by means of direct event via functional simulation examples
Read Online or Download ESD design for analog circuits PDF
Similar microelectronics books
Embedded Controller Hardware Design
Ken Arnold is an skilled embedded platforms fashion designer and president of HiTech apparatus, Inc. , an embedded structures layout company positioned in San Diego, California. He additionally teaches classes in embedded and software program layout on the college of California-San Diego. supplies the reader an built-in hardware/software method of embedded controller layout Stresses a "worst case" layout method for the cruel environments within which embedded structures are usually used comprises layout examples to make very important thoughts come alive
Ten years in the past, D. M. Rowe brought the bestselling CRC instruction manual of Thermoelectrics to large acclaim. in view that then, expanding environmental issues, wish for long-life electricity resources, and persevered development in miniaturization of electronics has resulted in a considerable raise in learn task related to thermoelectrics.
CMOS : front-end electronics for radiation sensors
CMOS: Front-End Electronics for Radiation Sensors deals a entire creation to built-in front-end electronics for radiation detectors, concentrating on units that trap person debris or photons and are utilized in nuclear and excessive strength physics, house instrumentation, scientific physics, fatherland defense, and comparable fields.
Handbook of Single-molecule Electronics
Single-molecule electronics has advanced as a colourful study box over the past 20 years. The imaginative and prescient is so one can create digital parts on the maximum point of miniaturization―the unmarried molecule. This booklet compiles and info state of the art examine with contributions from chemists, physicists, theoreticians, and engineers.
- Analog Circuit Design Volume Three: Design Note Collection
- Nanodevices for Photonics and Electronics
- Automatic Gain Control: Techniques and Architectures for RF Receivers
- High density plasma sources : design, physics, and performance
Additional resources for ESD design for analog circuits
Example text
The result of this distribution is the increase of the electric field near the junctions and decrease in the middle of the structure due to space charge mutual neutralization. The negative differential resistance of the p–i–n structure is easy to prove using the analytical approach; the p–i–n diode I–V characteristic can be determined by the following equations. The electric field in the i-region at I = δI = 0 is given by E = EBR + δE (x, δI) . 10) 1, the changing electric W g (E) dx = const. 11), expanding g(E) and limiting by the first three terms W W δU = 0 1 g BR δEdx = − 2 g BR (δE)2 dx.
In the SCN diode ρ = 0, the electric field is distributed uniformly: E = U L ≈ const, I–V characteristic has a saturation region at I = I0 . In the SCL diode ρ < 0, the electric field is increased linearly in the anode contact direction: EMAX = E (0) = 2U L. Near the cathode contact, E (L) ≈ 0 and the electron injection in the n-region is rather limited. Since both the doping concentration and the length of the diode play a major role, a relative boundary between the SCN and SCL diodes for Si devices is ND L = 6 × 6 × 1011 cm–2 the diode is SCL; at ND L 6 × 1011 1011 cm–2 [35].
Since both the doping concentration and the length of the diode play a major role, a relative boundary between the SCN and SCL diodes for Si devices is ND L = 6 × 6 × 1011 cm–2 the diode is SCL; at ND L 6 × 1011 1011 cm–2 [35]. At ND L –2 cm the diode is SCN. However, this statement is true with the assumption that the diffusion length of major carriers is bigger than the device length L, LD ∼ L. At a small diffusion length or a long n-region, for example, due to a high recombination rate, the SCL case is dominant.