By R. A. Powell
This quantity collects jointly for the 1st time a sequence of in-depth, serious reports of vital subject matters in dry etching, reminiscent of dry processing of III-V compound semiconductors, dry etching of refractory steel silicides and dry etching aluminium and aluminium alloys. This topical structure offers the reader with extra specialized details and references than present in a basic assessment article. moreover, it offers a huge point of view which might differently must be received by way of interpreting a good number of person study papers. an extra very important and exact function of this publication is the inclusion of an intensive literature overview of dry processing, compiled by way of seek of automated facts bases. an issue index permits prepared entry to the foremost issues raised in all of the chapters
Read or Download Dry Etching for Microelectronics PDF
Similar microelectronics books
Ken Arnold is an skilled embedded structures dressmaker and president of HiTech gear, Inc. , an embedded platforms layout enterprise situated in San Diego, California. He additionally teaches classes in embedded and software program layout on the collage of California-San Diego. provides the reader an built-in hardware/software method of embedded controller layout Stresses a "worst case" layout method for the cruel environments within which embedded platforms are usually used comprises layout examples to make vital suggestions come alive
Ten years in the past, D. M. Rowe brought the bestselling CRC guide of Thermoelectrics to broad acclaim. considering the fact that then, expanding environmental issues, hope for long-life electrical energy resources, and persevered development in miniaturization of electronics has resulted in a considerable elevate in study task concerning thermoelectrics.
CMOS: Front-End Electronics for Radiation Sensors bargains a entire creation to built-in front-end electronics for radiation detectors, concentrating on units that trap person debris or photons and are utilized in nuclear and excessive power physics, area instrumentation, scientific physics, place of birth safeguard, and comparable fields.
Single-molecule electronics has developed as a colourful learn box over the past twenty years. The imaginative and prescient is as a way to create digital parts on the maximum point of miniaturization―the unmarried molecule. This publication compiles and information state-of-the-art learn with contributions from chemists, physicists, theoreticians, and engineers.
- Handbook of Contamination Control in Microelectronics - Principles, Applications and Technology
- Silicon Germanium : Technology, Modeling, and Design
- MEMS and NEMS: Systems, Devices, and Structures (Nano- and Microscience, Engineering, Technology, and Medicine)
- Power Supplies for LED Driving
Additional info for Dry Etching for Microelectronics
76, 3758. W. Hess, 1983, in: Introduction to Microlithography, eds. F. G. J. Bowden (ACS Symposium Series, No. 219, American Chemical Society, Washington, D . C ) . W. Hess, 1982, J. Electrochem. Soc. 129, 2530. , M. Itoga and Y. Ban, 1981, in: Plasma Etching, eds. G. J. Mogab (The Electrochemical Society, Pennington) p. 225. W. H. D. Le Grange, 1976, AIAA Journal 14, 644. , and K. Hirata, 1980, Japan. J. Appl. Phys. 19, L405. , 1980, A User's Guide to Vacuum Technology (Wiley-Interscience, New York) p.
1981). Another residue which can form when carbon-containing vapors are used in aluminum etching involves polymerization of chlorocarbon fragments. The polymer that forms during aluminum etching in chlorocarbon vapors is not a pure chlorocarbon. Rather, this material often contains a large amount of aluminum (Nagy and Hess, 1982). Since A1C13 has a relatively low vapor pressure, it is deposited on surfaces within the reactor while etching and polymerization simultaneously occur. The result of this process is a chlorocarbon polymer containing A1C13.
And J. Pacansky, 1981, J. Electrochem. Soc. 128, 2645. , T. Yamazaki, M. Shibagaki and T. Kurisaki, 1982, Japan. J. Appl. Phys. 21, 1412. W. Hess, 1983, unpublished results. , October 1980, Electrochem. Soc. Extended Abstracts, Hollywood, FL Meeting, Abstract No. 329. , 1976, J. Electrochem. Soc. 123, 894. , 1979, Solid State Technol. 22 (4), 139. , 1979, J. Vac. Sci. Technol. 16, 164. M. C. Schwartz, 1981, J. Appl. Phys. 52, 2994. , E. Herb and K. Frick, 1981, Solid State Technol. 24 (10), 69.