Download Dry Etching for Microelectronics by R. A. Powell PDF

By R. A. Powell

This quantity collects jointly for the 1st time a sequence of in-depth, serious reports of vital subject matters in dry etching, reminiscent of dry processing of III-V compound semiconductors, dry etching of refractory steel silicides and dry etching aluminium and aluminium alloys. This topical structure offers the reader with extra specialized details and references than present in a basic assessment article. moreover, it offers a huge point of view which might differently must be received by way of interpreting a good number of person study papers. an extra very important and exact function of this publication is the inclusion of an intensive literature overview of dry processing, compiled by way of seek of automated facts bases. an issue index permits prepared entry to the foremost issues raised in all of the chapters

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76, 3758. W. Hess, 1983, in: Introduction to Microlithography, eds. F. G. J. Bowden (ACS Symposium Series, No. 219, American Chemical Society, Washington, D . C ) . W. Hess, 1982, J. Electrochem. Soc. 129, 2530. , M. Itoga and Y. Ban, 1981, in: Plasma Etching, eds. G. J. Mogab (The Electrochemical Society, Pennington) p. 225. W. H. D. Le Grange, 1976, AIAA Journal 14, 644. , and K. Hirata, 1980, Japan. J. Appl. Phys. 19, L405. , 1980, A User's Guide to Vacuum Technology (Wiley-Interscience, New York) p.

1981). Another residue which can form when carbon-containing vapors are used in aluminum etching involves polymerization of chlorocarbon fragments. The polymer that forms during aluminum etching in chlorocarbon vapors is not a pure chlorocarbon. Rather, this material often contains a large amount of aluminum (Nagy and Hess, 1982). Since A1C13 has a relatively low vapor pressure, it is deposited on surfaces within the reactor while etching and polymerization simultaneously occur. The result of this process is a chlorocarbon polymer containing A1C13.

And J. Pacansky, 1981, J. Electrochem. Soc. 128, 2645. , T. Yamazaki, M. Shibagaki and T. Kurisaki, 1982, Japan. J. Appl. Phys. 21, 1412. W. Hess, 1983, unpublished results. , October 1980, Electrochem. Soc. Extended Abstracts, Hollywood, FL Meeting, Abstract No. 329. , 1976, J. Electrochem. Soc. 123, 894. , 1979, Solid State Technol. 22 (4), 139. , 1979, J. Vac. Sci. Technol. 16, 164. M. C. Schwartz, 1981, J. Appl. Phys. 52, 2994. , E. Herb and K. Frick, 1981, Solid State Technol. 24 (10), 69.

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