By Hideaki Tsuchiya, Yoshinari Kamakura
A accomplished complicated point exam of the delivery conception of nanoscale devices
- Provides complex point fabric of electron delivery in nanoscale units from uncomplicated ideas of quantum mechanics via to complex idea and diverse numerical ideas for electron transport
- Combines a number of up to date theoretical and numerical ways in a unified demeanour, resembling Wigner-Boltzmann equation, the new growth of service delivery examine for nanoscale MOS transistors, and quantum correction approximations
- The authors process the topic in a logical and systematic method, reflecting their large educating and study backgrounds
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Extra resources for Carrier transport in nanoscale MOS transistors
Yamada, T. Maegawa and H. Tsuchiya (2008). Atomistic study on electronic properties of nanoscale SOI channels. Journal of Physics: Conference Series 109, 012012. 3] G. Kresse and J. Furthmüller (Oct. 1996). Efficient iterative schemes for ab initio total‐energy calculation using a plane‐wave basis set. Physical Review B 54(16), 11169–11186. 4] H. Tsuchiya, H. Ando, S. Sawamoto, T. Maegawa, T. Hara, H. Yao and M. Ogawa (Feb. 2010). Comparisons of performance potentials of silicon nanowire and graphene nanoribbon MOSFETs considering first‐principles bandstructure effects.
The mT reduction and enhancement are observed by applying uniaxial <110 > strain. 2 Present work Uchida et al. 18] Ungersboeck et al. 20]. 16 Unit cells used in the calculation for Si thin film, where we considered uniaxial strain parallel to <110 > direction. Dangling bonds of surface Sis are terminated with hydrogen atoms, and vacuum layers are included above and below the structures. Note that the axes in plane perpendicular to confinement direction is <110 > and <1 10>. 54 nm). 19 shows the in‐plane effective masses of the ground‐state Γ valley.
Saraswat and Y. Nishi (2005). Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime. IEDM Technical Digest, 135–138. X. Wang, P. Matagne, L. Shifren, B. Obradovic, R. Kotlyar, S. Cea, M. D. Giles (Aug. 2006). Physics of hole transport in strained silicon MOSFET inversion layers. IEEE Transactions on Electron Devices 53(8), 1840–1851. 20] E. Ungersboeck, S. Dhar, G. Karlowatz, H. Kosina and S. Selberherr (2007).