By Ashok Srivastava, Jose Mauricio Marulanda, Yao Xu, Ashwani Sharma
Discovery of one-dimensional fabric carbon nanotubes in 1991 via the japanese physicist Dr. Sumio Iijima has led to voluminous learn within the box of carbon nanotubes for varied purposes, together with attainable alternative of silicon utilized in the fabrication of CMOS chips. One attention-grabbing function of carbon nanotubes is that those should be metal or semiconducting with a bandgap counting on their diameter. looking for non-classical units and comparable applied sciences, either carbon nanotube-based field-effect transistors and metal carbon nanotube interconnects are being explored largely for rising common sense units and intensely large-scale integration. even if numerous types for carbon nanotube-based transistors and interconnects were proposed within the literature, an built-in method of lead them to appropriate with the current simulators is but to be completed. This ebook attempts during this course for the carbon-based electronics via basics of solid-state physics and units.
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Additional resources for Carbon-Based Electronics: Transistors and Interconnects at the Nanoscale
45 46 Current Transport in CNT Field-Effect Transistors the curve fitting has been used for the Region 2 given by the Eq. 40). The Region 2, defined by the gap predicted by the limits of Eqs. 18), is further extended to cover the Region 3. This is a very good approximation, but starts failing for gate voltages above 3 V. However, transistors will hardly operate beyond this voltage given the low power restrictions of the current CMOS technology [45–47]. 1 Current Equation In a CNT-FET, both diffusion and drift carrier transport mechanisms contribute to the current.
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